RF Power Transistor
PartHigh-power MOS transistor (IGBT or MOSFET) switching at 40 kHz, delivering 500–2000 W. A full specification article for this item is being written. Meanwhile its bill of materials and connections are below.
High-power MOS transistor (IGBT or MOSFET) switching at 40 kHz, delivering 500–2000 W. A full specification article for this item is being written. Meanwhile its bill of materials and connections are below.