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Inverter MOSFET

Part

Integrated circuit on microchip.jpg · Commons ↗ Report photo

High-power FET bridge (e.g., IRF3710) or IGBT modules rated 600–1200 V, supporting peak currents of 50–200 A during lamp inrush.

Class	Part

High-power FET bridge (e.g., IRF3710) or IGBT modules rated 600–1200 V, supporting peak currents of 50–200 A during lamp inrush. A full specification article for this item is being written. Meanwhile its bill of materials and connections are below.