IGBT Power Semiconductor
PartSilicon carbide insulated gate bipolar transistor rated for 1700 V DC and 600 A switching. A full specification article for this item is being written. Meanwhile its bill of materials and connections are below.
Silicon carbide insulated gate bipolar transistor rated for 1700 V DC and 600 A switching. A full specification article for this item is being written. Meanwhile its bill of materials and connections are below.