Thermal Interface Material
PartSilicone-based potting providing 3–5 W/m·K conductivity across power IC to heatsink gap. A full specification article for this item is being written. Meanwhile its bill of materials and connections are below.
Silicone-based potting providing 3–5 W/m·K conductivity across power IC to heatsink gap. A full specification article for this item is being written. Meanwhile its bill of materials and connections are below.